IPB083N10N3 N-Channel MOSFET

INCHANGE

IPB083N10N3 Description

Isc N-Channel MOSFET Transistor IPB083N10N3 *.

IPB083N10N3 Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPB083N10N3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 80 58 320 PD Total Dissipation @TC=25℃ 125 Tch Max. Operating J

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Datasheet Details

Part number: IPB083N10N3
Manufacturer: INCHANGE
File Size: 254.13 KB
Datasheet: IPB083N10N3-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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