IPB083N10N3G Power-Transistor

Infineon

IPB083N10N3G Description

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor .

IPB083N10N3G Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qual

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Datasheet Details

Part number: IPB083N10N3G
Manufacturer: Infineon ↗
File Size: 757.25 KB
Datasheet: IPB083N10N3G-Infineon.pdf
Description: Power-Transistor

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Power-Transistor Infineon

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