IPA65R110CFD N-Channel MOSFET

INCHANGE

IPA65R110CFD Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA65R110CFD *.

IPA65R110CFD Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPA65R110CFD Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 31.2 19.7 99.6 PD Total Dissipation @TC=25℃ 277.8 Tch Max. Op

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IPA65R110CFD Datasheet Preview — Preview of IPA65R110CFD PDF

Datasheet Details

Part number: IPA65R110CFD
Manufacturer: INCHANGE
File Size: 197.09 KB
Datasheet: IPA65R110CFD-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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