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IPA65R280C6 N-Channel MOSFET

IPA65R280C6 Description

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor *.

IPA65R280C6 Features

* With TO-220F Package
* Drain Source Voltage- : VDSS=650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IPA65R280C6 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 13.8 8.7 A IDM Drain Current-Single Pulsed 39 A PD Total Diss

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Datasheet Details

Part number
IPA65R280C6
Manufacturer
INCHANGE
File Size
221.52 KB
Datasheet
IPA65R280C6-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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