D750 Silicon NPN Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD750 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Wide Area of Safe Operation. High Current Capability APPLICATIONS. Desig.

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Datasheet Specifications

Part number: D750
Manufacturer: INCHANGE
File Size: 102.37 KB
Datasheet: D750-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for AF high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7V 15 A ICM Collector Current-Peak PC C

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D750 Silicon NPN Power Transistor INCHANGE

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