D1412 Silicon NPN Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1412 .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min). Complement to.

📥 Download Datasheet

D1412 Datasheet Preview — Preview of D1412 PDF

Datasheet Specifications

Part number: D1412
Manufacturer: INCHANGE
File Size: 131.25 KB
Datasheet: D1412-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* High current switching applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 5V 7A IB Base Curre

D1412 Distributors

📁 Related Datasheet

D1412A D1410A D1411 D1411A D1413 D1414

📌 All Tags

D1412 Silicon NPN Power Transistor INCHANGE

INCHANGE D1412-like datasheet

D1410

D1416

D1404