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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1411A
High-Current Switching Applications Power Amplifier Applications
2SD1411A
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 100 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 7 A
Base current
IB 1 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
30
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
Weight: 1.
D1411A Datasheet
