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D1411A 2SD1411A

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Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications 2SD1411A Unit: mm .

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Applications

* Power Amplifier Applications 2SD1411A Unit: mm
* Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A
* Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO

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