C1969 Silicon NPN Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 .
High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W. High Reliability APPLICATIONS. Designed for 10~14 watts output power class AB amplifiers.

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Datasheet Specifications

Part number: C1969
Manufacturer: INCHANGE
File Size: 188.94 KB
Datasheet: C1969-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage RBE= ∞ 25 V VEBO Emitter-Base Voltage 5V IC Collector Current Collector

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C1969 Silicon NPN Power Transistor INCHANGE

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