Datasheet4U Logo Datasheet4U.com

C1969 - Silicon NPN Power Transistor

Description

High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W High Reliability APPLICATIONS

applications in HF band.

📥 Download Datasheet

📁 Similar Datasheet

  • C1969 - 2SC1969 (Mitsubishi Electric Semiconductor)
  • C1969 - silicon NPN epitaxial planar type transistor (eleflow)
  • C1964 - RF POWER TRANSISTOR (Mitsubishi)
  • C1965 - NPN Power Transistor (Mitsubishi)
  • C1968 - 2SC1968 (Mitsubishi)
  • C1968 - Silicon NPN POWER TRANSISTOR (HGSemi)
  • C1968A - 2SC1968A (Mitsubishi)
  • C1904 - 2SC1904 (SavantIC)
  • C1906 - 2SC1906 (Hitachi Semiconductor)
  • C1907 - 2SC1907 (Hitachi Semiconductor)
Other Datasheets by INCHANGE

    Full PDF Text Transcription

    Click to expand full text
    INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage RBE= ∞ 25 V VEBO Emitter-Base Voltage 5V IC Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range 6A 20 W 1.7 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Rth j-c Thermal Resistance,Junction to Ambient 73.5 ℃/W Thermal Resistance,Junction to Case 6.
    Published: |