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C1969 - Silicon NPN Power Transistor

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Datasheet Details

Part number C1969
Manufacturer INCHANGE
File Size 188.94 KB
Description Silicon NPN Power Transistor
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C1969 Product details

Description

High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W High Reliability APPLICATIONS Designed for 10~14 watts output power class AB amplifiers applications in HF band.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage RBE= ∞ 25 V VEBO Emitter-Base Voltage 5V IC Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature Tstg Storage Temperature

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