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BU415B NPN Transistor

BU415B Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltag- : VCEO(SUS)= 400V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device perfor.

BU415B Applications

* Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A I

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Datasheet Details

Part number
BU415B
Manufacturer
INCHANGE
File Size
200.07 KB
Datasheet
BU415B-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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