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BU406H NPN Transistor

BU406H Description

isc Silicon NPN Power Transistor BU406H .
High Voltage: VCEV= 400V(Min). Low Saturation Voltage- : VCE(sat)= 1. Minimum Lot-to-Lot variations for robust device pe.

BU406H Applications

* Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A I

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Datasheet Details

Part number
BU406H
Manufacturer
INCHANGE
File Size
207.29 KB
Datasheet
BU406H-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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