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BDY55 Datasheet - INCHANGE

BDY55 NPN Transistor

*Excellent Safe Operating Area *DC Current Gain- : hFE=20-70@IC = 4A *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for general-purpose switching and.

BDY55 Datasheet (203.30 KB)

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Datasheet Details

Part number:

BDY55

Manufacturer:

INCHANGE

File Size:

203.30 KB

Description:

Npn transistor.

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BDY55 NPN Transistor INCHANGE

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