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BDY26 NPN Transistor

BDY26 Description

isc Silicon NPN Power Transistor BDY26 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 0. High S.

BDY26 Applications

* Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A

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Datasheet Details

Part number
BDY26
Manufacturer
INCHANGE
File Size
207.37 KB
Datasheet
BDY26-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDY26-like datasheet