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BDY39 NPN Transistor

BDY39 Description

isc Silicon NPN Power Transistor BDY39 .
Excellent Safe Operating Area. DC Current Gain- : hFE=25-100@IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 0.

BDY39 Applications

* Designed for use in high power AF output stages and in stabilized power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage

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Datasheet Details

Part number
BDY39
Manufacturer
INCHANGE
File Size
203.25 KB
Datasheet
BDY39-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BDY39-like datasheet