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BD649F NPN Transistor

BD649F Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD649F .
High DC Current Gain. Low Saturation Voltage. Complement to Type BD650F. Minimum Lot-to-Lot variations for robust device performance.

BD649F Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IC

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Datasheet Details

Part number
BD649F
Manufacturer
INCHANGE
File Size
209.86 KB
Datasheet
BD649F-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD649F-like datasheet