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BD545 - NPN Transistor

Description

Collector Current -IC= 15A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C Complement to Type BD546/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D

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isc Silicon NPN Power Transistor BD545/A/B/C DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C ·Complement to Type BD546/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD545 40 BD545A 60 VCBO Collector-Base Voltage V BD545B 80 BD545C 100 BD545 40 VCEO Collector-Emitter Voltage BD545A 60 V BD545B 80 BD545C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ
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