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BD540 - PNP Transistor

Description

DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) Complement to Type BD539 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and swit

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Datasheet Details

Part number BD540
Manufacturer Inchange Semiconductor
File Size 189.56 KB
Description PNP Transistor
Datasheet download datasheet BD540 Datasheet
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isc Silicon PNP Power Transistor BD540 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Complement to Type BD539 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.
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