Datasheet4U Logo Datasheet4U.com

BD537 - NPN Transistor

Description

DC Current Gain - : hFE = 40@ IC= 0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) Complement to Type BD538 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BD537 Complementary power transistors STMicroelectronics
BD537 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
BD537 POWER TRANSISTOR SavantIC
BD537 Power Transistor Motorola
BD530 PNP SILICON AMPLIFIER TRANSISTORS Motorola Inc

Other Datasheets by Inchange Semiconductor

Part Number Description
BD533 NPN Transistor
BD534 PNP Transistor
BD535 NPN Transistor
BD536 PNP Transistor
BD538 PNP Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor BD537 DESCRIPTION ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type BD538 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power linear and switching applications.
Published: |