BC847 NPN Transistor

INCHANGE

Description

isc Silicon NPN Plastic-Encapsulate Transistors BC847 .
DC Current Gain- : hFE=110-800 @IC= 2mA. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min. Minimum Lot-to-Lot variations for ro.

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BC847 Datasheet Preview — Preview of BC847 PDF

Datasheet Specifications

Part number: BC847
Manufacturer: INCHANGE
File Size: 182.04 KB
Datasheet: BC847-INCHANGE.pdf
Description: NPN Transistor

Applications

* Ideally suited for automatic insertion.
* For switching and AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissip

BC847 Distributors

📁 Related Datasheet

BC847-AU BC847-G BC847-Q BC847A BC847A-G BC847A-Q

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BC847 NPN Transistor INCHANGE

INCHANGE BC847-like datasheet

BC807-40