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BC847 NPN Transistor

BC847 Description

isc Silicon NPN Plastic-Encapsulate Transistors BC847 .
DC Current Gain- : hFE=110-800 @IC= 2mA. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min. Minimum Lot-to-Lot variations for ro.

BC847 Applications

* Ideally suited for automatic insertion.
* For switching and AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissip

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Datasheet Details

Part number
BC847
Manufacturer
INCHANGE
File Size
182.04 KB
Datasheet
BC847-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BC847-like datasheet