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AOB412L N-Channel MOSFET

AOB412L Description

isc N-Channel MOSFET Transistor AOB412L *.

AOB412L Features

* Drain Current
* ID= 60A@ TC=25℃
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 15.5mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable

AOB412L Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±25 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pulsed 140 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature

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Datasheet Details

Part number
AOB412L
Manufacturer
INCHANGE
File Size
234.56 KB
Datasheet
AOB412L-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE AOB412L-like datasheet