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AOB411L P-Channel MOSFET

AOB411L Description

isc P-Channel MOSFET Transistor AOB411L *.

AOB411L Features

* Drain Current
* ID= -78A@ TC=25℃
* Drain Source Voltage- : VDSS= -60V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 16.5mΩ(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitabl

AOB411L Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -78 A IDM Drain Current-Single Pulsed -230 A PD Total Dissipation @TC=25℃ 187 W Tj Max. Operating Junction Temperatur

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Datasheet Details

Part number
AOB411L
Manufacturer
INCHANGE
File Size
232.48 KB
Datasheet
AOB411L-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
INCHANGE AOB411L-like datasheet