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AD161 - NPN Transistor

Description

Wide Area of Safe Operation DC Current Gain- : hFE=50-350@IC= 0.5A Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power switch a

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isc Silicon NPN Power Transistor AD161 DESCRIPTION ·Wide Area of Safe Operation ·DC Current Gain- : hFE=50-350@IC= 0.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switch and amplifier, consumer and industrial applications.
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