Datasheet Details
| Part number | AD162 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.65 KB |
| Description | NPN Transistor |
| Download | AD162 Download (PDF) |
|
|
| Part number | AD162 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.65 KB |
| Description | NPN Transistor |
| Download | AD162 Download (PDF) |
|
|
|
·Wide Area of Safe Operation ·DC Current Gain- : hFE=50-350@IC= 0.5A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switch and amplifier, consumer and industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 20 W 150 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 8.75 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
isc Silicon NPN Power Transistor AD162.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AD162 | Germanium PNP Transistor | Telefunken |
 |
AD162 | Germanium NPN Transistor | Siemens |
| Part Number | Description |
|---|---|
| AD161 | NPN Transistor |
| AD149 | PNP Transistor |