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2SD669 - NPN Transistor

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Datasheet Details

Part number 2SD669
Manufacturer INCHANGE
File Size 205.44 KB
Description NPN Transistor
Datasheet download datasheet 2SD669-INCHANGE.pdf

2SD669 Product details

Description

High Collector Current-IC= 1.5A High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SB649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage

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