2SD665 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High Current Capability Excellent Safe Operating Area Complement to Type 2SB645 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier appli

Inchange Semiconductor

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Datasheet Details

Part number	2SD665
Manufacturer	Inchange Semiconductor
File Size	196.66 KB
Description	NPN Transistor
Datasheet	2SD665 Datasheet

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD665 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Complement to Type 2SB645 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 200W high-fidelity audio frequency amplifier output stage.

Published: Sep 29, 2020 |