Datasheet Details
| Part number | 2SD2017 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 205.44 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2017-INCHANGE.pdf
|
| Part number | 2SD2017 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 205.44 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2017-INCHANGE.pdf
|
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed of driver of solenoid, relay and motor, and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO
📁 2SD2017 Similar Datasheet