2SD2022 - NPN Transistor

Description

High DC Current Gain- : hFE = 3000(Min)@ IC= 1A Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency amplif

Inchange Semiconductor

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2SD2022 npn transistor by INCHANGE - Datasheet Preview

Datasheet Details

Part number	2SD2022
Manufacturer	Inchange Semiconductor
File Size	183.33 KB
Description	NPN Transistor
Datasheet	2SD2022 Datasheet

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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2022 DESCRIPTION ·High DC Current Gain- : hFE = 3000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low-frequency amplifications. ·Power amplifier applications.

Published: Sep 30, 2020 |