Datasheet Details
| Part number | 2SD2012 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 205.20 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD2012-INCHANGE.pdf
|
| Part number | 2SD2012 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 205.20 KB |
| Description | NPN Transistor |
| Datasheet |
2SD2012-INCHANGE.pdf
|
High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A Low Saturation Voltage- : VCE(sat)= 1.0V (Max) High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V
📁 2SD2012 Similar Datasheet