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2SC3298A - NPN Transistor

This page provides the datasheet information for the 2SC3298A, a member of the 2SC3298 NPN Transistor family.

Description

Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B Complement to Type 2SA1306/A/B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifi

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isc Silicon NPN Power Transistors 2SC3298/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B ·Complement to Type 2SA1306/A/B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SC3298 160 V 2SC3298A 180 2SC3298B 200 2SC3298 160 VCEO Collector-Emitter Voltage 2SC3298A 180 V 2SC3298B 200 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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