Good Linearity of hFE
High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B
Complement to Type 2SA1306/A/B
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power amplifi
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isc Silicon NPN Power Transistors
2SC3298/A/B
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B
·Complement to Type 2SA1306/A/B ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
2SC3298
160
V
2SC3298A
180
2SC3298B
200
2SC3298
160
VCEO
Collector-Emitter Voltage
2SC3298A
180
V
2SC3298B
200
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
2SC3298 Datasheet
