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2SC2975 - NPN Transistor

Description

With TO-66 Package Low collector saturation voltage

and reliable operation.

Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2975 DESCRIPTION ·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 7 V 5 A 40 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W isc website：www.iscsemi.
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