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isc Silicon NPN Power Transistor
2SC2979
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 0.75A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-voltage, high-speed and high power
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
900
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
2SC2979 Datasheet
