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2SC1683 - NPN Transistor

Description

Silicon NPN triple diffused mesa High breakdown voltage Large collector dissipation Complementary pair with 2SA843 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier Color TV

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1683 DESCRIPTION ·Silicon NPN triple diffused mesa ·High breakdown voltage ·Large collector dissipation ·Complementary pair with 2SA843 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AF power amplifier ·Color TV vertical deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 5 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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