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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1619
DESCRIPTION ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
IC PC TJ
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
100
V
80
V
6
V
6
A
50
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.5
℃/W
isc website：www.iscsemi.
2SC1619 Datasheet
