Datasheet Details
| Part number | 2SB899 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 180.56 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB899-INCHANGE.pdf
|
| Part number | 2SB899 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 180.56 KB |
| Description | PNP Transistor |
| Datasheet |
2SB899-INCHANGE.pdf
|
Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.) Low Collector Saturation Voltage- : VCE(sat)= -1.2(Max.) @IC= -3A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter
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