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2SB645 - PNP Transistor

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Datasheet Details

Part number 2SB645
Manufacturer INCHANGE
File Size 208.70 KB
Description PNP Transistor
Datasheet download datasheet 2SB645-INCHANGE.pdf

2SB645 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) High Power Dissipation- : PC= 150W(Max)@TC=25℃ Complement to Type 2SD665 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 200W high-fidelity audio frequency amplifier output stage.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-

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