Datasheet4U Logo Datasheet4U.com

2SB554 - PNP Transistor

Description

High Power Dissipation- : PC= 150W@TC= 25℃ High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Complement to Type 2SD424 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier ,DC-DC converter

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB554 PNP Transistor Toshiba
2SB554 SILICON POWER TRANSISTOR SavantIC
2SB550 SILICON POWER TRANSISTOR SavantIC
2SB551 SILICON POWER TRANSISTOR SavantIC
2SB552 SILICON PNP TRANSISTOR Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB550 PNP Transistor
2SB551 PNP Transistor
2SB552 PNP Transistor
2SB553 PNP Transistor
2SB555 PNP Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 150W@TC= 25℃ ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SD424 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous 1.5 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB554 isc website：www.iscsemi.
Published: |