Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -4A
Complement to Type 2SD553
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -4A ·Complement to Type 2SD553 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications. ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-70
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Total Power Dissipation @ Ta=25℃
PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-7
A
1.5 W
40
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SB553
isc website：www.iscsemi.
2SB553 Datasheet
