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2SB1558 - PNP Transistor

Description

High DC Current Gain- : hFE= 5000(Min)@IC= -7A Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A Complement to Type 2SD2387 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applicatio

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2387 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1558 isc website：www.iscsemi.
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