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2SB1559 - PNP Transistor

General Description

High DC Current Gain- : hFE= 5000(Min)@IC= -6A Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -6A Complement to Type 2SD2389 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator an

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1559 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2389 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications.