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2SA1486 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low frequency power amplifiers applications.

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·With TO-126 package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -600 V VCEO Collector-Emitter Voltage -600 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 1 W 10 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1486 isc website：www.iscsemi.
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