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2N6494 NPN Transistor

2N6494 Description

isc Silicon NPN Darlington Power Transistor .
High DC current gain : hFE= 500(Min)@ IC= 3A. With TO-3 package. Low collector saturation. 100% avalanche tested. Minimum Lot-to-.

2N6494 Applications

* Designed for general-purpose power amplifier and low frequency swithing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

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Datasheet Details

Part number
2N6494
Manufacturer
INCHANGE
File Size
183.30 KB
Datasheet
2N6494-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2N6494-like datasheet