2N6493 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC current gain : hFE= 500(Min)@ IC= 3A. With TO-3 package. Low collector saturation. 100% avalanche tested. Minimum Lot-to-.

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Datasheet Specifications

Part number: 2N6493
Manufacturer: INCHANGE
File Size: 183.54 KB
Datasheet: 2N6493-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose power amplifier and low frequency swithing applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous

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2N6493 NPN Transistor INCHANGE

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