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2N5661 - Silicon NPN Power Transistor

The 2N5661 by INCHANGE is a Silicon NPN Power Transistor. Below is the official datasheet preview.

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Official preview page of the 2N5661 Silicon NPN Power Transistor datasheet (INCHANGE).

Datasheet Details

Part number 2N5661
Manufacturer INCHANGE
File Size 217.46 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2N5661-INCHANGE.pdf
Additional preview pages of the 2N5661 datasheet.

2N5661 Product details

Description

Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 2

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