2N5660 Datasheet (Microsemi Corporation) - NPN POWER SILICON TRANSISTOR

2N5660, NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCER VEBO IB IC @ TA = +250C @ TC = +1000C Operating & Storage Junction Temperature Range Total Power Dissipation PT TJ, Tstg 2N5660 2N5661 5.0 87.5 2N5660 2N5661 2N5662 2N5663 200