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ICPB2002 Discrete Power GaN HEMT

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Description

ICPB2002 | Discrete Power GaN HEMT 12 Watt .
The ICPB2002 is a GaN on SiC discrete HEMT, designed to operate either pulsed or CW from DC to 12GHz.

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Datasheet Specifications

Part number
ICPB2002
Manufacturer
ICONIC RF
File Size
742.67 KB
Datasheet
ICPB2002-ICONICRF.pdf
Description
Discrete Power GaN HEMT

Features

* Frequency Range DC-12GHz
* 41.5dBm Nominal P3dB
* Maximum PAE at 6GHz of 65%
* Drain Bias 28V
* Technology: GaN on SiC
* Lead-free and RoHS compliant

Applications

* Aerospace & Defense

ICPB2002 Distributors

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