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ICPB1010 Discrete Power GaN HEMT

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Description

ICPB1010 | Discrete Power GaN HEMT 50 Watt .
The ICPB1010 is a GaN on SiC discrete HEMT that operates from DC-14GHz.

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Datasheet Specifications

Part number
ICPB1010
Manufacturer
ICONIC RF
File Size
2.03 MB
Datasheet
ICPB1010-ICONICRF.pdf
Description
Discrete Power GaN HEMT

Features

* Frequency Range DC-14GHz
* 48.5dBm Nominal P3dB Pulsed
* Maximum PAE at 6GHz of 72%
* 17.8dB Linear Gain at 6GHz
* Drain Bias 28V
* Technology: GaN on SiC
* Lead-free and RoHS compliant
* Chip Dimensions: 0.824 x 2.495 x 0.10mm Applic

Applications

* Aerospace & Defense

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