HY5V26CSF, HY5V26CF - (HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM

Hynix Semiconductor

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HY5V26CSF Datasheet Preview — This datasheet PDF includes multiple part numbers: HY5V26CSF, HY5V26CF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	HY5V26CSF, HY5V26CF
Manufacturer	Hynix Semiconductor
File Size	286.43 KB
Description	(HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM
Datasheet	HY5V26CF_HynixSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HY5V26CSF, HY5V26CF. Please refer to the document for exact specifications by model.

HY5V26CSF Product details

Description

Preliminary The Hynix HY5V26C(L/S)F is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.HY5V26C(L/S)F is organized as 4banks of 2,097,152x16 HY5V26C(L/S)F is offering fully synchronous operation referenced to a positive edge of the clock.All inputs and outputs are synchronized with the rising edge of the clock input.The data paths are internally pipelined to achieve very high bandwidth.All input and

Features

Single 3.3±0.3V power supply All device balls are compatible with LVTTL interface 54Ball FBGA (10.5mm x 8.3mm) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM.
Internal four banks operation Programmable CAS Latency ; 2, 3 Clocks.
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for.

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Published: Mar 6, 2007 |