HY5S5B6GLF-6 256Mbit (16Mx16bit) Mobile SDR Memory

Hynix Semiconductor

Description

256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19.
and is subject to change without notice.

📥 Download Datasheet

HY5S5B6GLF-6 Datasheet Preview — Preview of HY5S5B6GLF-6 PDF

Datasheet Specifications

Part number: HY5S5B6GLF-6
Manufacturer: Hynix Semiconductor
File Size: 2.99 MB
Datasheet: HY5S5B6GLF-6_HynixSemiconductor.pdf
Description: 256Mbit (16Mx16bit) Mobile SDR Memory

Features

* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK)
* MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - Duri

Applications

* which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304x16. Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data

HY5S5B6GLF-6 Distributors

📁 Related Datasheet

HY5-P HY50-P HY5002 HY5012A HY5012W HY50P

📌 All Tags

HY5S5B6GLF-6 256Mbit 16Mx16bit Mobile SDR Memory Hynix Semiconductor

Hynix Semiconductor HY5S5B6GLF-6-like datasheet