HY5RS573225F - 256 GDDR3 SDRAM

Hynix Semiconductor

Datasheet Details

Part number	HY5RS573225F
Manufacturer	Hynix Semiconductor
File Size	1.29 MB
Description	256 GDDR3 SDRAM
Datasheet	HY5RS573225F_HynixSemiconductor.pdf

and is subject to change without notice.

VDD=1.8V ± 0.1V, VDDQ=1.8V ± 0.1V Single ended READ Strobe (RDQS) per byte Single ended WRITE Strobe (WDQS) per byte Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Calibrated output drive Differential clock inputs (CK and CK#) Commands entered on each positive CK edge RDQS edge-aligned with data for READs; with WDQS center-aligned with data for WRITEs Four interna.

📁 HY5RS573225F Similar Datasheet

Other Datasheets by Hynix Semiconductor

HY5RS123235BFP - 512Mbit GDDR3 SDRAM
HY5RS123235FP - 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-11 - 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-12 - 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-14 - 512M (16Mx32) GDDR3 SDRAM
HY5RS123235FP-16 - 512M (16Mx32) GDDR3 SDRAM

Published: Aug 21, 2008 |