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HY5DU561622E, HY5DU56822E (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM

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Description

www.DataSheet4U.com 256Mb DDR SDRAM HY5DU56822E(L)TP HY5DU561622E(L)TP This document is a general product .
and is subject to change without notice.

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This datasheet PDF includes multiple part numbers: HY5DU561622E, HY5DU56822E. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
HY5DU561622E, HY5DU56822E
Manufacturer
Hynix Semiconductor
File Size
292.14 KB
Datasheet
HY5DU56822E_HynixSemiconductor.pdf
Description
(HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM
Note
This datasheet PDF includes multiple part numbers: HY5DU561622E, HY5DU56822E.
Please refer to the document for exact specifications by model.

Features

* VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +0.1V / -0.2V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation Double data rate interface So

Applications

* which requires large memory density and high bandwidth. This Hynix 256Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data str

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